ROHM Semiconductor has developed 4th Generation 650V IGBTs for automotive electric compressors, HV heaters, and industrial equipment inverters. The new automotive-grade devices achieve class-leading low conduction loss with VCE(sat) of 1.55V, provide 7 microseconds short-circuit withstand time at 25 degrees Celsius junction temperature, and comply with the AEC-Q101 automotive reliability standard. The lineup includes 12 products in the TO-247N package and 10 bare wafer products, with 12 additional TO-247-4L package products under development. ROHM plans to further expand the lineup with compact surface-mount IGBTs using TO-263L and top-side cooling packages.
Roshow Technology stated on an interactive platform on October 9 that its 8-inch silicon carbide substrate wafers have begun generating sales. The company said some samples have been sent to leading domestic customers for testing and verification, and that work on capacity building, yield improvement, and market expansion is continuing to advance.
Electrification & Mobility › EV Power Semiconductors (SiC / IGBT) ▲Supply
002617.CS · Demand · Positive Roshow's 8-inch silicon carbide substrate wafers have begun generating sales, with samples sent to leading domestic customers for testing and verification.
Wolfspeed Shares Jump 25% on $1.5B Department of War Loan Commitment
Wolfspeed shares catapulted more than 25% in early post-market trading on Wednesday after the company received a $1.5B, 30-year conditional loan commitment from the U.S. Department of War. The long-term financing is intended to support domestic development and production of silicon carbide materials and wide bandgap power devices, with an additional focus on U.S. national security applications. Wolfspeed plans to use the funds to upgrade its gallium nitride epitaxy capabilities for next-generation communications infrastructure and electronic warfare systems, and to develop radiation-hardening capabilities for its current SiC and future GaN products, drawing on its manufacturing facilities in North Carolina, New York and Arkansas. Under the loan terms, Wolfspeed would be required to issue to the DoW VWAP-based warrants to purchase, in the aggregate, up to 7.5% of Wolfspeed's fully diluted equity, with the warrants issuable in proportion as and when financing tranches are funded. CEO Robert Feurle said the scale and 30-year tenor of the conditional commitment reflects the long-term importance of the technology and manufacturing capabilities Wolfspeed has built in the United States.
Electrification & Mobility › EV Power Semiconductors (SiC / IGBT) ▲Capital
WOLF · Capital · Positive Wolfspeed received a $1.5B, 30-year conditional loan commitment from the U.S. Department of War to fund domestic SiC/GaN production.
Infineon opens semiconductor plant in Thailand with investment of over 48 billion baht
Infineon Technologies Manufacturing (Thailand) opened a new plant in Samut Prakan province on October 1, 2026, with Prime Minister Anutin Charnvirakul presiding over the ceremony, joined by Deputy Prime Minister and Finance Minister Ekniti Nitithanprapas. The plant received investment promotion from the BOI with an investment value of over 48 billion baht, covering the production of power control chip systems, integrated circuit and wafer testing, as well as research and development of semiconductor products. The plant is Infineon's third power control chip system production base, following Germany and China, starting with phase 1 and with plans to expand up to 5 phases. If all 5 phases are completed, it will be Infineon's largest assembly and testing production base in the world, with a total cleanroom area of 150,000 square meters, roughly twice the size of the company's current largest plant. Infineon plans to employ more than 5,000 Thai personnel in total, or approximately 1,000 people per phase, while the BOI has set conditions requiring the development of more than 600 Thai personnel in science and technology and the sending of more than 130 Thai personnel for specialized technology training abroad.
Electrification & Mobility › EV Power Semiconductors (SiC / IGBT) ▲Supply
Semiconductors › Advanced Packaging & Test (OSAT) Supply
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IFX.XETRA · Supply · Positive Infineon opened a new Thai plant expanding power-chip assembly, testing and R&D capacity, with plans for up to 5 phases making it its largest assembly/test base.
Infineon Opens Backend Manufacturing Hub in Bangkok, Targeting Up to 1,000 Jobs
Infineon Technologies AG officially inaugurated its new backend manufacturing site in Bangkok, Samut Prakan, together with Anutin Charnvirakul, Prime Minister of Thailand, and Alexander Gorski, Chief Operations Officer of Infineon Technologies. The greenfield facility is built for phased expansion and can scale up to five modules, giving Bangkok the potential to become one of Infineon's largest backend manufacturing sites over time; it currently employs around 350 people and is expected to grow to approximately 1,000 employees as the first building, Module A, ramps up. The site covers the full spectrum of semiconductor backend processes as well as wafer test, complementing the ongoing expansion of Infineon's frontend manufacturing capacities and serving automotive, industrial and energy infrastructure applications. The Bangkok site runs on 100 percent green electricity and incorporates water recycling, rainwater collection and on-site solar modules. Infineon had around 57,000 employees worldwide at the end of September 2025 and generated revenue of about €14.7 billion in its 2025 fiscal year.
Electrification & Mobility › EV Powertrain & Power Electronics ▲Supply
Electrification & Mobility › EV Power Semiconductors (SiC / IGBT) Supply
Semiconductors › Advanced Packaging & Test (OSAT) ▼Supply
IFX.XETRA · Supply · Positive Infineon inaugurated a new Bangkok backend manufacturing site that can scale to five modules, expanding its backend capacity and complementing frontend expansion.
Rohm, Toshiba, Mitsubishi Electric power semiconductor integration talks stall, falling behind 'summer' target for agreement
Talks among Rohm, Toshiba and Mitsubishi Electric on integrating their power semiconductor businesses are struggling, and a certain agreement that had initially been targeted for around the summer is now delayed. The talks began in March, and for now the three aim to reach an agreement by their November interim earnings announcements, but if they clash over the form of the integration and other issues, it could slip to March next year. The three companies envision a business integration centered on a holding company structure, under which would sit a business entity into which their power semiconductor divisions would be transferred and another entity carved out of the analog semiconductor and sensor operations held by Rohm and Toshiba. However, the equity stakes in the new company remain unclear amid a struggle for leadership, and details such as the scope of the businesses to be separated have yet to be worked out. Responding to the surge in global semiconductor demand driven by the artificial intelligence boom, and the time needed to obtain antitrust approval from Chinese authorities, are also contributing to the delay in the talks. Japanese players are a notable presence in the global power semiconductor market, but with many companies crowding the field, each one's scale is small, and if the three companies' integration is realized, they would leap to become the world's second-largest power semiconductor maker.
Semiconductors › Analog, Power & Discrete Competition
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6503.JP · Capital · Negative Mitsubishi Electric's power semiconductor business integration talks with Rohm and Toshiba have stalled, delaying the planned holding-company deal.
6963.JP · Capital · Negative Rohm's power semiconductor integration talks with Toshiba and Mitsubishi Electric are delayed amid unresolved equity stakes and leadership disputes.
United Nova Technology Expects to Turn Profitable in First Three Quarters, Raises Prices 15%–25% Across All Product Lines and Expands Capacity
United Nova Technology released its third-quarter earnings forecast on the evening of the 28th, expecting revenue of approximately 7.766 billion yuan for the first three quarters of 2026, up about 43.23% year on year, with net profit of approximately 681 million yuan, turning from a loss to a profit compared with the same period last year. In institutional research, the company said it had initiated price adjustments in the third quarter across all product categories including MOSFETs, IGBTs, silicon carbide, and analog chips, with an overall adjustment range of 15% to 25%. The price increases have now been fully implemented across all business segments, with an actual blended implementation rate of about 15%, and the revenue and gross margin elasticity from the price increases will begin to show in the third quarter and be released in the fourth quarter. On capacity, United Nova Technology's monthly production capacity for 8-inch silicon carbide wafers has reached 7,000 wafers, with plans to rapidly expand to 15,000 wafers per month. In addition, the company has fully completed its subscribed capital contribution to the joint venture United Nova Advanced, with cumulative paid-in registered capital of 2.129 billion yuan, and a 25.1% stake making it the largest shareholder. The funds are earmarked for the fourth-phase project of United Nova Advanced, which has a total investment of about 20 billion yuan and a capital base of 12 billion yuan, and is planned to build a 12-inch automotive-grade mixed-signal chip production line with monthly capacity of 50,000 wafers. CSC Financial said United Nova Technology has turned profitable and has moved from scale construction into a profit release channel.